180 research outputs found

    25th Space Photovoltaic Research and Technology Conference

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    The attached document contains abstracts of presentations from the 25th Space Photovoltaic Research and Technology (SPRAT) Conference held in Cleveland, OH from September 19 to 21, 2018. The abstracts represent work that furthers the advancement of space solar power ranging from the cell level to full arrays in flight. For additional information on any presentation, please contact the author using the information provided with each abstract

    Workshop III: Future Directions for Thin Films Workshop at SPRAT XIX

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    The SPRAT conference series at NASA Glenn Research Center has devoted a workshop to the topic of thin-film solar cell technology and potential aerospace applications. With the advent of aerospace applications requiring very-high, mass, specific power, there has been a renewed interest in thin film materials and solar cells. Aerospace applications such as station-keeping for high-altitude airships, space solar power, lunar and planetary surface power, and solar electric propulsion would be enhanced or enabled by the development of flexible, very-high, mass specific power thin film arrays. To initiate discussion, a series of questions were asked of the attendees. These questions, three generated by the group, and the attendees comments follow

    Further Analyses of the NASA Glenn Research Center Solar Cell and Photovoltaic Materials Experiment Onboard the International Space Station

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    Accurate air mass zero (AM0) measurement is essential for the evaluation of new photovoltaic (PV) technology for space solar cells. The NASA Glenn Research Center (GRC) has flown an experiment designed to measure the electrical performance of several solar cells onboard NASA Goddard Space Flight Center's (GSFC) Robotic Refueling Mission's (RRM) Task Board 4 (TB4) on the exterior of the International Space Station (ISS). Four industry and government partners provided advanced PV devices for measurement and orbital environment testing. The experiment was positioned on the exterior of the station for approximately eight months, and was completely self-contained, providing its own power and internal data storage. Several new cell technologies including four-junction (4J) Inverted Metamorphic Multi-Junction (IMM) cells were evaluated and the results will be compared to ground-based measurement methods

    Automatic alignment of surgical videos using kinematic data

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    Over the past one hundred years, the classic teaching methodology of "see one, do one, teach one" has governed the surgical education systems worldwide. With the advent of Operation Room 2.0, recording video, kinematic and many other types of data during the surgery became an easy task, thus allowing artificial intelligence systems to be deployed and used in surgical and medical practice. Recently, surgical videos has been shown to provide a structure for peer coaching enabling novice trainees to learn from experienced surgeons by replaying those videos. However, the high inter-operator variability in surgical gesture duration and execution renders learning from comparing novice to expert surgical videos a very difficult task. In this paper, we propose a novel technique to align multiple videos based on the alignment of their corresponding kinematic multivariate time series data. By leveraging the Dynamic Time Warping measure, our algorithm synchronizes a set of videos in order to show the same gesture being performed at different speed. We believe that the proposed approach is a valuable addition to the existing learning tools for surgery.Comment: Accepted at AIME 201

    Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

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    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent

    Radiation tolerance of GaAs1-xSbx solar cells

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    High radiation tolerance of GaAs1-xSbx based solar cells is demonstrated for the low-intensity-low-temperature (LILT) conditions of the target planets Saturn, Jupiter, and Mars. The GaAs1-xSbx-based cells are irradiated with high energy electrons to assess the effect of harsh radiation environment on the solar cell and the response of the cell is then investigated in terms of its photovoltaic operation. This system shows significant radiation resistance to the high energy electron environment for the conditions of the planets of interest. An unusual increase of the short circuit current after irradiation is observed at low temperature, which is supported by a simultaneous increase in the external quantum efficiency of the cell under the same conditions. The open circuit voltage and fill factor of the cell are especially tolerant to irradiation, which is also reflected in unchanged dark current-voltage characteristics of the solar cell upon irradiation particularly at LILT

    Progress Towards III-V Photovoltaics on Flexible Substrates

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    Presented here is the recent progress of the NASA Glenn Research Center OMVPE group's efforts in the development of high efficiency thin-film polycrystalline III-V photovoltaics on optimum substrates. By using bulk polycrystalline germanium (Ge) films, devices of high efficiency and low mass will be developed and incorporated onto low-cost flexible substrates. Our progress towards the integration of high efficiency polycrystalline III-V devices and recrystallized Ge films on thin metal foils is discussed

    GaAs Photovoltaics on Polycrystalline Ge Substrates

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    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect
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